Solid state intermetallic compound layer growth between copper and hot dipped indium coatings
Identifieur interne : 000089 ( Main/Exploration ); précédent : 000088; suivant : 000090Solid state intermetallic compound layer growth between copper and hot dipped indium coatings
Auteurs : RBID : ISTEX:10853_1995_Article_BF01154497.pdfAbstract
Solid state growth of intermetallic compound layers that form between hot dipped indium coatings and copper was investigated in diffusion couples aged at temperatures of 70, 100 and 135 °C and time periods of up to 300 days. At an annealing temperature of 70 °C, the metastable composition, Cu36In64, was observed at the interface. Ageing at 100 °C caused a dual layer structure with the Cu36In64 layer joined by a copper-rich intermetallic compound, Cu11In9, that is noted in the equilibrium phase diagram. An annealing temperature of 135 °C caused the eventual development of a single copper-rich intermetallic layer, Cu57In43, at the interface. Total intermetallic layer thickness was documented as a function of ageing time and temperature, exhibiting at1/2 dependence with an apparent activation energy of 20 kJ mol−1.
DOI: 10.1007/BF01154497
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<author><name>A. C. Kilgo</name>
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<author><name>R. Grant</name>
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<front><div type="abstract" xml:lang="eng">Solid state growth of intermetallic compound layers that form between hot dipped indium coatings and copper was investigated in diffusion couples aged at temperatures of 70, 100 and 135 °C and time periods of up to 300 days. At an annealing temperature of 70 °C, the metastable composition, Cu36In64, was observed at the interface. Ageing at 100 °C caused a dual layer structure with the Cu36In64 layer joined by a copper-rich intermetallic compound, Cu11In9, that is noted in the equilibrium phase diagram. An annealing temperature of 135 °C caused the eventual development of a single copper-rich intermetallic layer, Cu57In43, at the interface. Total intermetallic layer thickness was documented as a function of ageing time and temperature, exhibiting at1/2 dependence with an apparent activation energy of 20 kJ mol−1.</div>
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<abstract lang="eng">Solid state growth of intermetallic compound layers that form between hot dipped indium coatings and copper was investigated in diffusion couples aged at temperatures of 70, 100 and 135 °C and time periods of up to 300 days. At an annealing temperature of 70 °C, the metastable composition, Cu36In64, was observed at the interface. Ageing at 100 °C caused a dual layer structure with the Cu36In64 layer joined by a copper-rich intermetallic compound, Cu11In9, that is noted in the equilibrium phase diagram. An annealing temperature of 135 °C caused the eventual development of a single copper-rich intermetallic layer, Cu57In43, at the interface. Total intermetallic layer thickness was documented as a function of ageing time and temperature, exhibiting at1/2 dependence with an apparent activation energy of 20 kJ mol−1.</abstract>
<relatedItem type="series"><titleInfo type="abbreviated"><title>J Mater Sci</title>
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<titleInfo><title>Journal of Materials Science</title>
<partNumber>Year: 1995</partNumber>
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<identifier type="issn">0022-2461</identifier>
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