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Solid state intermetallic compound layer growth between copper and hot dipped indium coatings

Identifieur interne : 000089 ( Main/Exploration ); précédent : 000088; suivant : 000090

Solid state intermetallic compound layer growth between copper and hot dipped indium coatings

Auteurs : RBID : ISTEX:10853_1995_Article_BF01154497.pdf

Abstract

Solid state growth of intermetallic compound layers that form between hot dipped indium coatings and copper was investigated in diffusion couples aged at temperatures of 70, 100 and 135 °C and time periods of up to 300 days. At an annealing temperature of 70 °C, the metastable composition, Cu36In64, was observed at the interface. Ageing at 100 °C caused a dual layer structure with the Cu36In64 layer joined by a copper-rich intermetallic compound, Cu11In9, that is noted in the equilibrium phase diagram. An annealing temperature of 135 °C caused the eventual development of a single copper-rich intermetallic layer, Cu57In43, at the interface. Total intermetallic layer thickness was documented as a function of ageing time and temperature, exhibiting at1/2 dependence with an apparent activation energy of 20 kJ mol−1.

DOI: 10.1007/BF01154497

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<div type="abstract" xml:lang="eng">Solid state growth of intermetallic compound layers that form between hot dipped indium coatings and copper was investigated in diffusion couples aged at temperatures of 70, 100 and 135 °C and time periods of up to 300 days. At an annealing temperature of 70 °C, the metastable composition, Cu36In64, was observed at the interface. Ageing at 100 °C caused a dual layer structure with the Cu36In64 layer joined by a copper-rich intermetallic compound, Cu11In9, that is noted in the equilibrium phase diagram. An annealing temperature of 135 °C caused the eventual development of a single copper-rich intermetallic layer, Cu57In43, at the interface. Total intermetallic layer thickness was documented as a function of ageing time and temperature, exhibiting at1/2 dependence with an apparent activation energy of 20 kJ mol−1.</div>
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<abstract lang="eng">Solid state growth of intermetallic compound layers that form between hot dipped indium coatings and copper was investigated in diffusion couples aged at temperatures of 70, 100 and 135 °C and time periods of up to 300 days. At an annealing temperature of 70 °C, the metastable composition, Cu36In64, was observed at the interface. Ageing at 100 °C caused a dual layer structure with the Cu36In64 layer joined by a copper-rich intermetallic compound, Cu11In9, that is noted in the equilibrium phase diagram. An annealing temperature of 135 °C caused the eventual development of a single copper-rich intermetallic layer, Cu57In43, at the interface. Total intermetallic layer thickness was documented as a function of ageing time and temperature, exhibiting at1/2 dependence with an apparent activation energy of 20 kJ mol−1.</abstract>
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